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| (R) STPS20100CT HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) Tj (max) 2 x 10A 100V 0.7V 175C A1 K A2 FEATURES Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability s s s s K A1 A2 DESCRIPTION High voltage dual Schottky rectifier suited for switchmode power supplies and other power converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 Tc=110C VR = 60V tp=10ms sinusoidal tp=2s F=1KHz tp=100s TO-220AB STP20100CT Value 100 Per diode Per diode Per device Per diode Per diode Per diode 30 10 20 200 1 1 - 65 to + 175 175 1000 Unit V A A A A A A C C V/s Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature (*) Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 August 2002 - Ed:2C STPS20100CT THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 1.6 0.9 0.15 C/W Unit C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25C Tj = 125C VF** Forward voltage drop IF = 20A IF = 10A IF = 20A Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.55 x IF(AV) + 0.015 x IF2(RMS) Tj = 125C Tj = 125C Tj = 25C 0.60 Min. Typ. Max. 150 100 0.85 0.70 0.95 Unit A mA V Fig. 1 : Average forward power dissipation versus average forward current. (Per diode) P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig. 2 : Average current versus ambient temperature. (duty cycle : 0.5) (Per diode) I F(av)(A) Rth(j-a)=Rth(j-c) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 12 10 8 Rth(j-a)=15 o C/W 6 T =0.5 T 4 2 I F(av)(A) 1 2 3 4 5 6 7 8 =tp/T tp =tp/T tp Tamb( o C) 50 75 100 125 9 10 11 12 13 14 15 0 0 25 2/4 STPS20100CT Fig. 3 : Non repetitive surge peak forward current versus overload duration. (Maximum values) (Per diode) 180 160 140 120 100 80 60 40 20 0 0.001 IM Tc=110 oC Tc=50 o C Fig. 4 : Relative variation of thermal transient impedance junction to case versus pulse duration. IM(A) Tc=25 oC t =0.5 t(s) 0.01 0.1 1 Fig. 5 : Reverse leakage current versus reverse voltage applied. (Typical values) (Per diode) 50.000 10.000 Tj=125 o C Fig. 6 : Junction capacitance versus reverse voltage applied. (Typical values) (Per diode) 2000 I R(mA) C(pF) Tj=125 o C F= 1MH z 1000 1.000 Tj=100 o C Tj=75 oC Tj=50 o C 0.100 0.010 VR(V) 0.001 0 10 20 30 40 50 60 70 80 90 100 VR(V) 100 1 10 100 Fig. 7 : Forward voltage drop versus forward current. (Maximum values) (Per diode) 1.4 1.2 Tj=125 o C VFM(V) 1.0 0.8 0.6 0.4 0.2 I FM(A) 0.0 0.1 1 10 100 3/4 STPS20100CT PACKAGE MECHANICAL DATA TO-220AB (JEDEC outline) H2 A C REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Dia. L5 L7 Dia OPTIONAL L6 L2 L9 D F2 F1(x2) L4 M F E G1 G DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.30 4.60 0.169 0.181 1.22 1.32 0.048 0.052 2.40 2.72 0.094 0.107 0.33 0.70 0.013 0.028 0.61 0.93 0.024 0.037 1.14 1.70 0.045 0.067 1.14 1.70 0.045 0.067 4.95 5.15 0.195 0.202 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 Typ. 0.630 Typ. 13.00 14.00 0.512 0.551 2.65 2.95 0.104 0.116 14.80 15.75 0.583 0.620 6.20 6.60 0.244 0.260 3.40 3.94 0.134 0.155 2.60 Typ. 0.102 Typ. 3.75 3.89 0.148 0.153 Ordering type STPS20100CT s s Marking STPS20100CT Package TO-220AB Weight 2.23g Base qty 50 Delivery mode Tube s s Cooling method : by conduction (C) Recommended torque value : 0.55N.m. Maximum torque value : 0.7N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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